F2021 specification: 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Liknande

F2021
- 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2021 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Storlek : 40 KB

Ansökan : 7.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor