F2201 specification: 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Liknande

F2201
- 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F2202
- 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2201 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Storlek : 38 KB

Ansökan : 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor