F5001 specification: 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Liknande

F5001
- 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F5001 Datasheet och Spec

Tillverkare : Polyfet RF

Packing :

Pins : 2

Temperature : Min -65 °C | Max 150 °C

Storlek : 40 KB

Ansökan : 0.5 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor