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L225 specification: 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Liknande
- L225
- 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
L225 Datasheet och Spec
Tillverkare : Polyfet RF
Packing : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Storlek : 41 KB
Ansökan : 6 Watt, silicon gate enhancement mode RF power LDMOS transistor
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