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L2801 specification: 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 Liknande
- L2801
- 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
L2801 Datasheet och Spec
Tillverkare : Polyfet RF
Packing : SO
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Storlek : 46 KB
Ansökan : 15 Watt, silicon gate enhancement mode RF power LDMOS transistor
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