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L8701P specification: 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P Liknande
- L8701P
- 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
L8701P Datasheet och Spec
Tillverkare : Polyfet RF
Packing : SO-8
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Storlek : 46 KB
Ansökan : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
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