Path:OKDatasheet > Semiconductor Datasheet > Polyfet RF Datasheet > LB401
LB401 specification: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Liknande
- LB401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Storlek : 41 KB
Ansökan : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LB401 PDF Ladda ner