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LC821 specification: 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 Liknande
- LC821
- 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
LC821 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 6
Temperature : Min -65 °C | Max 150 °C
Storlek : 40 KB
Ansökan : 8 Watt, silicon gate enhancement mode RF power LDMOS transistor
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