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LK802 specification: 45 Watt, silicon gate enhancement mode RF power LDMOS transistor
LK802 Liknande
- LK802
- 45 Watt, silicon gate enhancement mode RF power LDMOS transistor
LK802 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Storlek : 38 KB
Ansökan : 45 Watt, silicon gate enhancement mode RF power LDMOS transistor
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