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LQ821 specification: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Liknande
- LQ821
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Storlek : 38 KB
Ansökan : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
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