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LX401 specification: 60 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX401 Liknande
- LX401
- 60 Watt, silicon gate enhancement mode RF power LDMOS transistor
LX401 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Storlek : 40 KB
Ansökan : 60 Watt, silicon gate enhancement mode RF power LDMOS transistor
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