P122 specification: "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 Liknande

P122
- "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"

P122 Datasheet och Spec

Tillverkare : Polyfet RF

Packing : SO

Pins : 6

Temperature : Min -65 °C | Max 150 °C

Storlek : 47 KB

Ansökan : "1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor"