P123 specification: 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 Liknande

P123
- 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 Datasheet och Spec

Tillverkare : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Storlek : 41 KB

Ansökan : 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor