P124 specification: 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Liknande

P124
- 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Datasheet och Spec

Tillverkare : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Storlek : 36 KB

Ansökan : 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor