P281 specification: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Liknande

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet och Spec

Tillverkare : Polyfet RF

Packing : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Storlek : 41 KB

Ansökan : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor