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SA741 specification: 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 Liknande
- SA741
- 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Storlek : 39 KB
Ansökan : 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
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