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SH702 Liknande

  • SH702
    • 90 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SH703
    • 130 Watt, silicon gate enhancement mode RF power VDMOS transistor

SH702 Datasheet och Spec

Tillverkare : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Storlek : 39 KB

Ansökan : 90 Watt, silicon gate enhancement mode RF power VDMOS transistor 

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