SM706 Liknande

  • SM703
    • 80 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM704
    • 125 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM705
    • 150 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM706
    • 135 Watt, silicon gate enhancement mode RF power VDMOS transistor

SM706 Datasheet och Spec

Tillverkare : Polyfet RF 

Packing :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Storlek : 40 KB

Ansökan : 135 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SM706 PDF Ladda ner