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SP741 specification: 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP741 Liknande
- SP741
- 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SP741 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Storlek : 38 KB
Ansökan : 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
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