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SQ721 specification: 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SQ721 Liknande
- SQ721
- 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SQ721 Datasheet och Spec
Tillverkare : Polyfet RF
Packing :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Storlek : 39 KB
Ansökan : 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
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