2SC3676 specification: NPN transistor for 900V/300mA high-voltage amplifier and high-voltage switching applications

2SC3676 Liknande

2SC3000
- NPN epitaxial planar silicon transistor, HF amp application
2SC3038
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3039
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3042
- NPN triple diffused planar silicon transistor, for switching regulator
2SC3068
- NPN transistor for low-frequency general-purpose amplifier applications
2SC3069
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3070
- NPN epitaxial planar silicon transistor, high h(FE), low-frequency general-purpose amp application
2SC3071
- NPN transistor, high hFE, low-frequency general-purpose amplifier applications

2SC3676 Datasheet och Spec

Tillverkare : SANYO

Packing :

Pins : 3

Temperature : Min -55 °C | Max 150 °C

Storlek : 105 KB

Ansökan : NPN transistor for 900V/300mA high-voltage amplifier and high-voltage switching applications