Path:OKDatasheet > Semiconductor Datasheet > Semelab Datasheet > IRFY430M-T257
IRFY430M-T257 specification: 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 Liknande
- IRFY044
- 60V Vdss N-Channel FET (field effect transistor)
- IRFY120
- 100V Vdss N-Channel FET (field effect transistor)
- IRFY130
- 100V Vdss N-Channel FET (field effect transistor)
- IRFY140
- 100V Vdss N-Channel FET (field effect transistor)
- IRFY240C
- 200V Vdss N-Channel FET (field effect transistor)
- IRFY340
- 400V Vdss N-Channel FET (field effect transistor)
- IRFY430
- 500V Vdss N-Channel FET (field effect transistor)
- IRFY430M-T257
- 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 Datasheet och Spec
Tillverkare : Semelab
Packing : TO257AA
Pins : 0
Temperature : Min 0 °C | Max 0 °C
Storlek : 21 KB
Ansökan : 500V Vdss N-Channel FET (field effect transistor)
IRFY430M-T257 PDF Ladda ner