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RC10S08G specification: Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 10 A.
RC10S08G Liknande
- RC10S01
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
- RC10S01G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 100 V. Max average forward current 10 A.
- RC10S02
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
- RC10S02G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 200 V. Max average forward current 10 A.
- RC10S04
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
- RC10S04G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 400 V. Max average forward current 10 A.
- RC10S06
- Silicon silastic cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
- RC10S06G
- Silicon GPP cell rectifier. Max repetitive peak reverse voltage 600 V. Max average forward current 10 A.
RC10S08G Datasheet och Spec
Tillverkare : Shanghai Sunrise
Packing :
Pins : 0
Temperature : Min -50 °C | Max 150 °C
Storlek : 15 KB
Ansökan : Silicon GPP cell rectifier. Max repetitive peak reverse voltage 800 V. Max average forward current 10 A.
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