Path:OKDatasheet > Semiconductor Datasheet > Sharp Datasheet > LH532600D
LH532600D specification: CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
LH532600D Liknande
- LH530800AD
- CMOS 1M(128K x 8) static RAM
- LH530800AD-Y
- CMOS 1M(128K x 8)3 V-drive MROM
- LH530800AN
- CMOS 1M(128K x 8) static RAM
- LH530800AN-Y
- CMOS 1M(128K x 8)3 V-drive MROM
- LH530800AU
- CMOS 1M(128K x 8) static RAM
- LH531000BD
- LH531000BD CMOS 1M (128K x 8) Mask Programmable ROM 28-pin DIP
- LH531000BN
- LH531000BN CMOS 1M (128K x 8) Mask Programmable ROM 28-pin SOP
- LH531000BN-S
- LH531000BN-S CMOS 1M (128K x 8) Mask Programmable ROM, Low-Voltage Operation 28-pin SOP
LH532600D Datasheet och Spec
Tillverkare : Sharp
Packing : DIP
Pins : 40
Temperature : Min 0 °C | Max 70 °C
Storlek : 78 KB
Ansökan : CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
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