UT7Q512K-UCX specification: 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.

UT7Q512K-UCX Liknande

UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512
- 512K words by 8 bits high-performance CMOS asynchronous static RAM. 100ns acces time. 5V.
UT7Q512K-UCA
- "512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped."
UT7Q512K-UCA
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish hot solder dipped.
UT7Q512K-UCC
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish gold.
UT7Q512K-UCX
- 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.
UT7Q512K-UPC
- 512K x 8 SRAM. 100ns access time, 5V operation. Prototype flow. Lead finish gold.

UT7Q512K-UCX Datasheet och Spec

Tillverkare : UTMC

Packing : Ceramic flatpack

Pins : 32

Temperature : Min -55 °C | Max 125 °C

Storlek : 117 KB

Ansökan : 512K x 8 SRAM. 100ns access time, 5V operation. Military temperature range flow. Lead finish factory option.