Path:OKDatasheet > Semiconductor Datasheet > WingShing Datasheet > BUT11
BUT11 specification: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Path:OKDatasheet > Semiconductor Datasheet > WingShing Datasheet > BUT11
BUT11 specification: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
Tillverkare : WingShing
Packing : TO-220
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Storlek : 24 KB
Ansökan : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.