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IRFBF30 specification: HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A
IRFBF30 Liknande
- IRFB11N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
- IRFB13N50A
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A
- IRFB18N50K
- HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.26 Ohm, ID = 17A
- IRFB23N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.090 Ohm, ID = 23A
- IRFB23N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.10 Ohm, ID = 24A
- IRFB260N
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- IRFB31N20D
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.082 Ohm, ID = 31A
- IRFB33N15D
- HEXFET power MOSFET. VDSS = 150V, RDS(on) = 0.056 Ohm, ID = 33A
IRFBF30 Datasheet och Spec
Tillverkare : IR
Packing :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 182 KB
Ansökan : HEXFET power MOSFET. VDSS = 900V, RDS(on) = 3.7 Ohm, ID = 3.6A
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