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IRFU9N20D specification: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
IRFU9N20D Liknande
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IRFU9N20D Datasheet och Spec
Tillverkare : IR
Packing : I-PAK
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Storlek : 138 KB
Ansökan : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.38 Ohm, ID = 9.4A
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