Path:okDatasheet > Semiconductor Datasheet > JGD Datasheet > JGD-26
FR154G P4KE180CA BZX84C11 SMAJ110A MUR410 1N968C SMAJ8.0CA SFR1A4 ZMM55-C3V9 3EZ12D10 1N5538D S1B 1N5931C SMBJ5920A 1N965D FS1A 1N5529 3EZ140D5 SMBJ120A 1N4127D 1N968D 1N5926A P4KE91A P4KE39C HER102L 1N5936A 3EZ14D
Del nr | Tillverkare | Ansökan |
---|---|---|
1N5930C | JGD | 1.5 W, silicon zener diode. Zener voltage 16V. Test current 23.4 mA. +-2% tolerance. |
1N4127C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 56V. 2% tolerance. |
SS18 | JGD | Surface mount schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward rectified current 1.0 A. |
FR154G | JGD | 1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 400V. |
P4KE180CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. Bidirectional. |
BZX84C11 | JGD | 350mW zener diode, 11V |
SMAJ110A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 110 V. |
MUR410 | JGD | 4.0A ultra fast rectifier. Max recurrent peak reverse voltage 100V. |
1N968C | JGD | 0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-2% tolerance. |
SMAJ8.0CA | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 8.0 V. Bidirectional. |
SFR1A4 | JGD | Soft fast recovery rectifier. Max recurrent peak reverse voltage 400 V. Max average forward current 1.0 A. |
ZMM55-C3V9 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 3.7-4.1 V. Test current 5 mA. +-5% tolerance. |
3EZ12D10 | JGD | 3 W, silicon zener diode. Nominal voltage 12 V, current 63 mA, +-10% tolerance. |
1N5538D | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 18.0 V. Test current 1.0 mAdc. +-1% tolerance. |
S1B | JGD | Surface mount rectifier. Max recurrent peak reverse voltage 100 V. Max average forward rectified current 1.0 A. |
1N5931C | JGD | 1.5 W, silicon zener diode. Zener voltage 18V. Test current 20.8 mA. +-2% tolerance. |
SMBJ5920A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.2 V. Test current 60.5 mA. +-10% tolerance. |
1N965D | JGD | 0.5W, silicon zener diode. Zener voltage 15V. Test current 8.5mA. +-1% tolerance. |
FS1A | JGD | 1.0A, fast recovery silicon rectifier. Max recurrent peak reverse voltage 50V. |
1N5529 | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-20% tolerance. |
3EZ140D5 | JGD | 3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-5% tolerance. |
SMBJ120A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 133 V (min), 147 V (max). Test current 1.0 mA. |
1N4127D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 56V. 1% tolerance. |
1N968D | JGD | 0.5W, silicon zener diode. Zener voltage 20V. Test current 6.2mA. +-1% tolerance. |
1N5926A | JGD | 1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-10% tolerance. |
P4KE91A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. |
P4KE39C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 39 V. Bidirectional. |
HER102L | JGD | 1.0A, glass passivated high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
1N5936A | JGD | 1.5 W, silicon zener diode. Zener voltage 30V. Test current 12.5 mA. +-10% tolerance. |
3EZ14D | JGD | 3 W, silicon zener diode. Nominal voltage 14 V, current 53 mA, +-20% tolerance. |