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N4933 BZX84C3V9 SMBJ5950 SMAJ12A 1N752A SFR152 SMBJ75CA 3EZ140D10 1N4115C KBPC808G 1N989B 1N5928C 1N5546C SMAJ7.0C KBP202 SMAJ100 1N5535D 1N5955B SMAJ24C 1N5524D SMAJ15C 1N5917C 3EZ62D1 1N5539 P4KE13A SMAJ11 SMAJ150CA SMBJ5933

JGD datablad Catalog-35

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ZMM55-B15 JGDSurface mount zener diode, 500mW. Nominal zener voltage 13.8-15.6 V. Test current 5 mA. +-2% tolerance.
SMBJ5955 JGD1.5W silicon surface mount zener diode. Zener voltage 180 V. Test current 2.1 mA. +-20% tolerance.
1N4933 JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V.
BZX84C3V9 JGD350mW zener diode, 3.9V
SMBJ5950 JGD1.5W silicon surface mount zener diode. Zener voltage 110 V. Test current 3.4 mA. +-20% tolerance.
SMAJ12A JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V.
1N752A JGD500mW, silicon zener diode. Zener voltage 5.6 V. Test current 20 mA. +-5% tolerance.
SFR152 JGDSoft fast recovery rectifier. Max recurrent peak reverse voltage 100 V. Max average forward current 1.5 A.
SMBJ75CA JGDSurface mount transient voltage suppressor. Breakdown voltage 83.3 V (min), 92.1 V (max). Test current 1.0 mA. Bidirectional.
3EZ140D10 JGD3 W, silicon zener diode. Nominal voltage 140 V, current 5.3 mA, +-10% tolerance.
1N4115C JGD500mW low noise silicon zener diode. Nominal zener voltage 22V. 2% tolerance.
KBPC808G JGDSingle phase 8.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 800V.
1N989B JGD0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. +-5% tolerance.
1N5928C JGD1.5 W, silicon zener diode. Zener voltage 13V. Test current 28.8 mA. +-2% tolerance.
1N5546C JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 33.0 V. Test current 1.0 mAdc. +-2% tolerance.
SMAJ7.0C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional.
KBP202 JGDSingle-phase 2.0 A silicon bridge rectifier. Max recurrent peak reverse voltage 200V.
SMAJ100 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 100 V.
1N5535D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 15.0 V. Test current 1.0 mAdc. +-1% tolerance.
1N5955B JGD1.5 W, silicon zener diode. Zener voltage 180 V. Test current 2.1 mA. +-5% tolerance.
SMAJ24C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V. Bidirectional.
1N5524D JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance.
SMAJ15C JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 15 V. Bidirectional.
1N5917C JGD1.5 W, silicon zener diode. Zener voltage 4.7V. Test current 79.8 mA. +-2% tolerance.
3EZ62D1 JGD3 W, silicon zener diode. Nominal voltage 62 V, current 12 mA, +-1% tolerance.
1N5539 JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 19.0 V. Test current 1.0 mAdc. +-20% tolerance.
P4KE13A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V.
SMAJ11 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 11 V.
SMAJ150CA JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V. Bidirectional.
SMBJ5933 JGD1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-20% tolerance.

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