| Del nr | Tillverkare | Ansökan |
|---|
| SMAJ26 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 26 V. |
| SR103 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 30 V. Max average forward current 1.0 A. |
| SMAJ24A | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 24 V. |
| P4KE6.8C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. Bidirectional. |
| GS1J | JGD | 1.0A, surface mount rectifier. Max recurrent peak reverse voltage 600V. |
| P6KE6.8A | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 6.8 V. |
| SMAJ7.0 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. |
| SMBJ5921 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 6.8 V. Test current 55.1 mA. +-20% tolerance. |
| SMBJ13CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 14.4 V (min), 15.9 V (max). Test current 1.0 mA. Bidirectional. |
| P6KE9.1CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 9.1 V. Bidirectional. |
| SMBJ5925A | JGD | 1.5W silicon surface mount zener diode. Zener voltage 10 V. Test current 37.5 mA. +-10% tolerance. |
| FR107G | JGD | 1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 1000V. |
| 3EZ180D10 | JGD | 3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-10% tolerance. |
| 1N4624 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.7V. |
| HER202 | JGD | 2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 100V. |
| SMAJ7.0C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 7.0 V. Bidirectional. |
| 3EZ6.2D5 | JGD | 3 W, silicon zener diode. Nominal voltage 6.2 V, current 121 mA, +-5% tolerance. |
| ZMM55-B12 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 11.4-12.7 V. Test current 5 mA. +-2% tolerance. |
| FR302G | JGD | 3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 100V. |
| SMBJ13A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 14.4 V (min), 15.9 V (max). Test current 1.0 mA. |
| SMAJ90 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 90 V. |
| SMAJ10 | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 10 V. |
| SMAJ12C | JGD | 400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 12 V. Bidirectional. |
| ZMM55-A16 | JGD | Surface mount zener diode, 500mW. Nominal zener voltage 15.3-17.1 V. Test current 5 mA. +-1% tolerance. |
| SF13G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A. |
| ZMM5221A | JGD | Surface mount zener diode. Nominal zener voltage 2.4 V. Test current 20 mA. +-3% tolerance. |
| 1EZ160D5 | JGD | 1 watt silicon zener diode. Nominal zener voltage 160V at 1.6mA. |
| FR156G | JGD | 1.5A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 800V. |
| 1N4110D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 16V. 1% tolerance. |
| 1N5520A | JGD | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. |
