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MTB36N06V specification: TMOS V power field effect transistor
MTB36N06V Liknande
- MTB30N06VL
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB30P06V
- TMOS V power field effect transistor
- MTB33N10E
- TMOS E-FET high energy power FET
- MTB36N06V
- TMOS V power field effect transistor
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N120E
- TMOS E-FET high energy power FET D2PAK for surface mount
- MTB3N60E
- TMOS E-FET high energy power FET D2PAK for surface mount
MTB36N06V Datasheet och Spec
Tillverkare : Motorola
Packing : DPAK
Pins : 4
Temperature : Min -55 °C | Max 175 °C
Storlek : 265 KB
Ansökan : TMOS V power field effect transistor
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