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PHB73N06T specification: 55 V, N-channel enhancement mode field-effect transistor
PHB73N06T Liknande
- PHB73N06T
- 55 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB7N60E
- 600 V, power MOS transistor avalanche energy rated
PHB73N06T Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Storlek : 290 KB
Ansökan : 55 V, N-channel enhancement mode field-effect transistor
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