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PHB7N60E specification: 600 V, power MOS transistor avalanche energy rated
PHB7N60E Liknande
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- 55 V, N-channel enhancement mode field-effect transistor
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- 25 V, N-channel enhancement mode field-effect transistor
- PHB78NQ03LT
- 25 V, N-channel enhancement mode field-effect transistor
- PHB7N60E
- 600 V, power MOS transistor avalanche energy rated
PHB7N60E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 100 KB
Ansökan : 600 V, power MOS transistor avalanche energy rated
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