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PHW10N40E specification: 400 V, power MOS transistor avalanche energy rated
PHW10N40E Liknande
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
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- PowerMOS transistor. Avalanche energy rated.
PHW10N40E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 98 KB
Ansökan : 400 V, power MOS transistor avalanche energy rated
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