Path:OKDatasheet > Semiconductor Datasheet > Philips Datasheet > PHW10N60E
PHW10N60E specification: 600 V, power MOS transistor avalanche energy rated
PHW10N60E Liknande
- PHW10N40E
- 400 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW10N60E
- 600 V, power MOS transistor avalanche energy rated
- PHW11N50E
- PowerMOS transistor. Avalancne energy rated.
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW11N50E
- 500 V, power MOS transistor avalanche energy rated
- PHW13N40E
- PowerMOS transistor. Avalanche energy rated.
- PHW14N50E
- PowerMOS transistor. Avalanche energy rated.
PHW10N60E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Storlek : 126 KB
Ansökan : 600 V, power MOS transistor avalanche energy rated
PHW10N60E PDF Ladda ner