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PHX23NQ10T specification: 100 V, N-channel trenchMOS transistor
PHX23NQ10T Liknande
- PHX23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHX2N40E
- 400 V, power MOS transistor isolated version of PHP4N40E
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- PowerMOS transistor. Avalanche energy rated.
PHX23NQ10T Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min -65 °C | Max 150 °C
Storlek : 69 KB
Ansökan : 100 V, N-channel trenchMOS transistor
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