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PHX2N40E specification: 400 V, power MOS transistor isolated version of PHP4N40E
PHX2N40E Liknande
- PHX23NQ10T
- 100 V, N-channel trenchMOS transistor
- PHX2N40E
- 400 V, power MOS transistor isolated version of PHP4N40E
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- PowerMOS transistor. Avalanche energy rated.
- PHX2N50E
- 500 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- 600 V, power MOS transistor avalanche energy rated
- PHX2N60E
- PowerMOS transistor. Avalanche energy rated.
PHX2N40E Datasheet och Spec
Tillverkare : Philips
Packing : SOT
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Storlek : 26 KB
Ansökan : 400 V, power MOS transistor isolated version of PHP4N40E
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