Path:OKDatasheet > Semiconductor Datasheet > ST Microelectronics Datasheet > IRF820
IRF820 specification: N-channel enhancement mode power MOS transistor, 500V, 3.0A
Path:OKDatasheet > Semiconductor Datasheet > ST Microelectronics Datasheet > IRF820
IRF820 specification: N-channel enhancement mode power MOS transistor, 500V, 3.0A
Tillverkare : ST Microelectronics
Packing : TO-220
Pins : 3
Temperature : Min -65 °C | Max 150 °C
Storlek : 185 KB
Ansökan : N-channel enhancement mode power MOS transistor, 500V, 3.0A