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IRF822FI specification: N-channel enhancement mode power MOS transistor, 500V, 1.9A
IRF822FI Liknande
- IRF820
- N-channel enhancement mode power MOS transistor, 500V, 3.0A
- IRF820
- N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFET
- IRF820FI
- N-channel enhancement mode power MOS transistor, 500V, 2.2A
- IRF821
- N-channel MOSFET, 450V, 2.5A
- IRF821FI
- N-channel MOSFET, 450V, 2.0A
- IRF822
- N-channel enhancement mode power MOS transistor, 500V, 2.8A
- IRF822FI
- N-channel enhancement mode power MOS transistor, 500V, 1.9A
- IRF823
- "N-channel MOSFET, 450V, 2.2A"
IRF822FI Datasheet och Spec
Tillverkare : ST Microelectronics
Packing : ISOWATT220
Pins : 3
Temperature : Min -65 °C | Max 150 °C
Storlek : 185 KB
Ansökan : N-channel enhancement mode power MOS transistor, 500V, 1.9A
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