STH8NA60FI Liknande

• STH8N80
  • Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C
• STH8N80FI
  • Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R
• STH8NA60FI
  • N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
• STH8NB90FI
  • N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET