STH8NB90FI specification: N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET

STH8NB90FI Liknande

STH8N80
- Power dissipation 180 W Transistor polarity N Channel Current Id cont. 8.2 A Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R Temperature current 25 ?C Temperature power 25 ?C
STH8N80FI
- Power dissipation 70 W Transistor polarity N Channel Current Id cont. 5.1 A Current Idm pulse 35 A Voltage isolation 4 kV Pitch lead 5.45 mm Voltage Vds max 800 V Resistance Rds on 1.2 R
STH8NA60FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS
STH8NB90FI
- N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET

STH8NB90FI Datasheet och Spec

Packing :

Pins : 0

Temperature : Min 0 °C | Max 0 °C

Storlek : 342 KB

Ansökan : N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET