WMBT3904 specification: NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A

WMBT3904 Liknande

WMBT3904
- NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
WMBT3904
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WMBT3906
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WMBT3906
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WMBT5401LT1
- PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
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WMBTA42
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WMBTA92
- NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.

WMBT3904 Datasheet och Spec

Tillverkare : WingShing

Packing : SOT-89

Pins : 3

Temperature : Min 0 °C | Max 0 °C

Storlek : 72 KB

Ansökan : NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A