WMBTA42 Liknande

  • WMBT3904
    • NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT3904
    • NPN epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT3906
    • PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT3906
    • PNP epitaxial silicon high voltage transistor Power dissipation 225mW. Collector current(max) 0.2A
  • WMBT5401LT1
    • PNP silicon transistor. Collector-emitter voltage -150V. Collector-base voltage -160V. Emitter-base voltage -5.0V
  • WMBT5551LT1
    • NPN silicon transistor. Collector-emitter voltage 160V. Collector-base voltage 180V. Emitter-base voltage 6.0V
  • WMBTA42
    • NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.
  • WMBTA92
    • NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA.

WMBTA42 Datasheet och Spec

Tillverkare : WingShing 

Packing : SOT-23 

Pins : 3 

Temperature : Min 0 °C | Max 0 °C

Storlek : 80 KB

Ansökan : NPN epitaxial silicon transistor. Power dissipation 225mW. Collector current(max) 500mA. 

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