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204 SMBJ5926 SMBJ6.0A SMAJ30 SMBJ5938C 1N980 SMBJ5926C HER205 SF13 HA11 MMBD1201 SMBJ7.0CA HER153 P6KE27A SMBJ5933B BZX84C20 P6KE91C W02M SMBJ51C BZX84C3 1N4739 1N959 3EZ180D 3EZ9.1D4 3EZ68D1 3EZ22D 1N4110 SMBJ5914

JGD datablad Catalog-14

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SMAJ150 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 150 V.
SMBJ5953A JGD1.5W silicon surface mount zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance.
RL204 JGDSilicon rectifier. Max recurrent peak reverse voltage 400 V. Max average forward rectified current 2.0 A.
SMBJ5926 JGD1.5W silicon surface mount zener diode. Zener voltage 11 V. Test current 34.1 mA. +-20% tolerance.
SMBJ6.0A JGDSurface mount transient voltage suppressor. Breakdown voltage 6.67 V (min), 7.37 V (max). Test current 10.0 mA.
SMAJ30 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 30 V.
SMBJ5938C JGD1.5W silicon surface mount zener diode. Zener voltage 36 V. Test current 10.4 mA. +-2% tolerance.
1N980 JGD0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. +-20% tolerance.
SMBJ5926C JGD1.5W silicon surface mount zener diode. Zener voltage 11 V. Test current 34.1 mA. +-2% tolerance.
HER205 JGD2.0 A, high efficiency rectifier. Max recurrent peak reverse voltage 400V.
SF13 JGDSuper fast rectifier. Max recurrent peak reverse voltage 150 V. Max average forward current 1.0 A.
HA11 JGD1.0A, high efficiency rectifier. Max recurrent peak reverse voltage 50V.
MMBD1201 JGDSurface mount switching diode. Max forward voltage 1.00V at 200mA.
SMBJ7.0CA JGDSurface mount transient voltage suppressor. Breakdown voltage 7.78 V (min), 8.60 V (max). Test current 10.0 mA. Bidirectional.
HER153 JGD1.5 A, high efficiency rectifier. Max recurrent peak reverse voltage 200V.
P6KE27A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 27 V.
SMBJ5933B JGD1.5W silicon surface mount zener diode. Zener voltage 22 V. Test current 17.0 mA. +-5% tolerance.
BZX84C20 JGD350mW zener diode, 20V
P6KE91C JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 91 V. Bidirectional.
W02M JGDSingle phase silicon bridge rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.5 A.
SMBJ51C JGDSurface mount transient voltage suppressor. Breakdown voltage 56.7 V (min), 69.3 V (max). Test current 1.0 mA. Bidirectional.
BZX84C3 JGD350mW zener diode, 3V
1N4739 JGD1W zener diode. Nominal zener voltage 9.1V. 10% tolerance.
1N959 JGD0.5W, silicon zener diode. Zener voltage 8.2V. Test current 15.0mA. +-20% tolerance.
3EZ180D JGD3 W, silicon zener diode. Nominal voltage 180 V, current 4.2 mA, +-20% tolerance.
3EZ9.1D4 JGD3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-4% tolerance.
3EZ68D1 JGD3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-1% tolerance.
3EZ22D JGD3 W, silicon zener diode. Nominal voltage 22 V, current 34 mA, +-20% tolerance.
1N4110 JGD500mW low noise silicon zener diode. Nominal zener voltage 16V.
SMBJ5914 JGD1.5W silicon surface mount zener diode. Zener voltage 3.6 V. Test current 104.2 mA. +-20% tolerance.

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