Path:okDatasheet > Semiconductor Datasheet > JGD Datasheet > JGD-17

34A P6KE100A SMBJ5924 ZMM55-D5V6 1N4735A SMBJ5945C BA779-2 1N958D 3EZ100D2 1N5820 P4KE220 SMBJ11C ZMM5240C ZMM5250C P6KE36 SMAJ16 3EZ9.1D SF25 SMBJ75 3EZ27D3 ZMM55-B3V6 FR103L 1N5543B 1A1G 1N5938D SMBJ5937 SMBJ5932A 1N5940C

JGD datablad Catalog-17

Del nrTillverkareAnsökan
SMBJ170 JGDSurface mount transient voltage suppressor. Breakdown voltage 189 V (min), 231 V (max). Test current 1.0 mA.
IN5408 JGD3.0 A, silicon rectifier. Max recurrent peak reverse voltage 1000 V, max RMS voltage 700 V, max D. C blocking voltage 1000 V.
ZMM5234A JGDSurface mount zener diode. Nominal zener voltage 6.2 V. Test current 20 mA. +-3% tolerance.
P6KE100A JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 100 V.
SMBJ5924 JGD1.5W silicon surface mount zener diode. Zener voltage 9.1 V. Test current 41.2 mA. +-20% tolerance.
ZMM55-D5V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 5.2-6.0 V. Test current 5 mA. +-20% tolerance.
1N4735A JGD1W zener diode. Zener voltage 6.2V.
SMBJ5945C JGD1.5W silicon surface mount zener diode. Zener voltage 68 V. Test current 5.5 mA. +-2% tolerance.
BA779-2 JGDSurface mount switching diode.
1N958D JGD0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. +-1% tolerance.
3EZ100D2 JGD3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance.
1N5820 JGD3.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V.
P4KE220 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 220 V.
SMBJ11C JGDSurface mount transient voltage suppressor. Breakdown voltage 12.2 V (min), 14.9 V (max). Test current 1.0 mA. Bidirectional.
ZMM5240C JGDSurface mount zener diode. Nominal zener voltage 10 V. Test current 20 mA. +-10% tolerance.
ZMM5250C JGDSurface mount zener diode. Nominal zener voltage 20 V. Test current 6.2 mA. +-10% tolerance.
P6KE36 JGD400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V.
SMAJ16 JGD400 W peak pulse power. Surface mount transient voltage suppressor. Working peak reverse voltage 16 V.
3EZ9.1D JGD3 W, silicon zener diode. Nominal voltage 9.1 V, current 82 mA, +-20% tolerance.
SF25 JGDSuper fast rectifier. Max recurrent peak reverse voltage 300 V. Max average forward current 2.0 A.
SMBJ75 JGDSurface mount transient voltage suppressor. Breakdown voltage 83.3 V (min), 102 V (max). Test current 1.0 mA.
3EZ27D3 JGD3 W, silicon zener diode. Nominal voltage 27 V, current 28 mA, +-3% tolerance.
ZMM55-B3V6 JGDSurface mount zener diode, 500mW. Nominal zener voltage 3.4-3.8 V. Test current 5 mA. +-2% tolerance.
FR103L JGD1.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 200V.
1N5543B JGD0.4 W, low voltage avalanche diode. Nominal zener voltage 25.0 V. Test current 1.0 mAdc. +-5% tolerance.
1A1G JGD1.0A glass passivated rectifier. Max recurrent peak reverse voltage 50V.
1N5938D JGD1.5 W, silicon zener diode. Zener voltage 36V. Test current 10.4 mA. +-1% tolerance.
SMBJ5937 JGD1.5W silicon surface mount zener diode. Zener voltage 33 V. Test current 11.4 mA. +-20% tolerance.
SMBJ5932A JGD1.5W silicon surface mount zener diode. Zener voltage 20 V. Test current 18.7 mA. +-10% tolerance.
1N5940C JGD1.5 W, silicon zener diode. Zener voltage 43V. Test current 8.7 mA. +-2% tolerance.

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 >>