Path:okDatasheet > Semiconductor Datasheet > JGD Datasheet > JGD-23
36 1N4764C FR301G SMBJ17A 1N4134C 1N4745D SR308 P6KE150CA SMBJ12CA P4KE180 KBU604G SMBJ5936D SR750 P4KE13 P6KE36C 1N4615 SMBJ5942D 1N4105D KBU600G 3EZ68D SMBJ160 SF11G 1N5817 BAW56 1N4623 3EZ200D10 3EZ43D5 3EZ4.7D2
Del nr | Tillverkare | Ansökan |
---|---|---|
P6KE22CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 22 V. Bidirectional. |
F1A7 | JGD | 1.0 A fast recovery rectifier. Max recurrent peak reverse voltage 1000 V. |
SMBJ5936 | JGD | 1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-20% tolerance. |
1N4764C | JGD | 1W zener diode. Nominal zener voltage 100V. 2% tolerance. |
FR301G | JGD | 3.0A, glass passivated fast recovery rectifier. Max recurrent peak reverse voltage 50V. |
SMBJ17A | JGD | Surface mount transient voltage suppressor. Breakdown voltage 18.9 V (min), 20.9 V (max). Test current 1.0 mA. |
1N4134C | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 91V. 2% tolerance. |
1N4745D | JGD | 1W zener diode. Nominal zener voltage 16V. 1% tolerance. |
SR308 | JGD | Schottky barrier rectifier. Max recurrent peak reverse voltage 80 V. Max average forward current 3.0 A. |
P6KE150CA | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 150 V. Bidirectional. |
SMBJ12CA | JGD | Surface mount transient voltage suppressor. Breakdown voltage 13.3 V (min), 14.7 V (max). Test current 1.0 mA. Bidirectional. |
P4KE180 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 180 V. |
KBU604G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 400V. |
SMBJ5936D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 30 V. Test current 12.5 mA. +-1% tolerance. |
SR750 | JGD | Schottky barrier rectifier (single chip). Max repetitive peak reverse voltage 50 V. Max average forward current 7.5 A. |
P4KE13 | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 13 V. |
P6KE36C | JGD | 400 Watt peak power. Transient voltage suppressor diode. Nominal voltage 36 V. Bidirectional. |
1N4615 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 2.0V. |
SMBJ5942D | JGD | 1.5W silicon surface mount zener diode. Zener voltage 51 V. Test current 7.3 mA. +-1% tolerance. |
1N4105D | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 11V. 1% tolerance. |
KBU600G | JGD | Single phase 6.0 A glass passivated bridge rectifier. Max recurrent peak reverse voltage 50V. |
3EZ68D | JGD | 3 W, silicon zener diode. Nominal voltage 68 V, current 11 mA, +-20% tolerance. |
SMBJ160 | JGD | Surface mount transient voltage suppressor. Breakdown voltage 178 V (min), 218 V (max). Test current 1.0 mA. |
SF11G | JGD | Glass passivated super fast rectifier. Max recurrent peak reverse voltage 50 V. Max average forward current 1.0 A. |
1N5817 | JGD | 1.0 A, schottky barrier rectifier. Max reccurent peak reverse voltage 20 V, max RMS voltage 14 V, max DC blocking voltage 20 V. |
BAW56 | JGD | Surface mount switching diode. Max forward voltage 1.00V at 50mA. |
1N4623 | JGD | 500mW low noise silicon zener diode. Nominal zener voltage 4.3V. |
3EZ200D10 | JGD | 3 W, silicon zener diode. Nominal voltage 200 V, current 3.7 mA, +-10% tolerance. |
3EZ43D5 | JGD | 3 W, silicon zener diode. Nominal voltage 43 V, current 17 mA, +-5% tolerance. |
3EZ4.7D2 | JGD | 3 W, silicon zener diode. Nominal voltage 4.7V, current 160mA, +-2% tolerance. |